我們研發(fā)并生產(chǎn)的2-6英半導(dǎo)體級以及半絕緣級高純度砷化鎵晶體和晶片被廣泛應(yīng)用于半導(dǎo)體集成電路以及LED通用照明等領(lǐng)域。
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
半導(dǎo)體砷化鎵規(guī)格 Specifications of semi-conducting GaAs wafer
|
生長方法 |
VGF |
|||
|
摻雜類型 |
P型：鋅 |
N型：硅 |
||
|
晶片形狀 |
圓形（尺寸2、3、4、6英寸） |
|||
|
晶向 |
(100)±0.5° |
|||
|
* Other Orientations maybe available upon request |
||||
|
Dopant |
硅 （N 型） |
鋅 （P 型） |
||
|
載流子濃度 |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
||
|
遷移率 |
( 1-2.5) × 103 |
50-120 |
||
|
位錯 |
100-5000 |
3,000-5,000 |
||
|
直徑 |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
|
|
厚度 |
350±25 |
625±25 |
625±25 |
|
|
TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
|
|
TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
|
|
WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
|
|
OF (mm) |
17±1 |
22±1 |
32.5±1 |
|
|
OF / IF (mm) |
7±1 |
12±1 |
18±1 |
|
|
Polish* |
E/E, |
E/E, |
E/E, |
|
|
*E=Etched, P=Polished（*E=腐蝕, P=拋光） |
||||
|
**If needed by customer |
||||
半絕緣砷化鎵 Specifications of semi-insulating GaAs wafer
|
生長方法 Growth Method |
VGF |
|||
|
摻雜類型 Dopant |
SI 型：碳 SI Type: Carbon |
|||
|
晶片形狀 Wafer Shape |
圓形（尺寸2、3、4、6英寸） Round (DIA: 2", 3", 4", 6") |
|||
|
晶向 Surface Orientation * |
(100)±0.5° |
|||
|
* Other Orientations maybe available upon request 其他晶向要求可根據(jù)客戶需求加工 |
||||
|
電阻率 Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
||
|
遷移率 Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
||
|
位錯 Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
||
|
晶片直徑 Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
|
厚度 Thickness (μm) |
350±25 |
625±25 |
625±25 |
675±25 |
|
TTV [P/P] (μm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
|
TTV [P/E] (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
|
WARP (μm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
|
OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
|
OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
|
Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
|
*E=Etched, P=Polished （*E=腐蝕, P=拋光） |
||||
|
**If needed by customer 根據(jù)客戶需要 |
||||
